Preliminary Technical Information
TrenchMV TM
Power MOSFET
IXTP44N10T
IXTY44N10T
V DSS
I D25
R DS(on)
= 100 V
= 44 A
≤ 30 m ?
N-Channel Enhancement Mode
Avalanche Rated
TO-220 (IXTP)
D (TAB)
G
D S
Symbol
Test Conditions
Maximum Ratings
TO-252 AA (IXTY)
V DSS
V DGR
V GSM
I D25
I L
I DM
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C; R GS = 1 M ?
Transient
T C = 25 ° C
Package Current Limit, RMS TO-252A
T C = 25 ° C, pulse width limited by T JM
100
100
± 30
44
25
140
V
V
V
A
A
A
G
G = Gate
S = Source
S
D (TAB)
D = Drain
TAB = Drain
I AR
E AS
T C = 25 ° C
T C = 25 ° C
10
250
A
mJ
dv/dt
P D
T J
T JM
T stg
T L
T SOLD
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
T J ≤ 175 ° C, R G = 18 ?
T C = 25 ° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
3
130
-55 ... +175
175
-40 ... +175
300
260
V/ns
W
° C
° C
° C
° C
° C
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
M d
Mounting torque (TO-220)
1.13 / 10 Nm/lb.in.
Space savings
High power density
Weight
TO-220
TO-252
3
0.8
g
g
Applications
Automotive
- Motor Drives
- 42V Power Bus
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
- ABS Systems
DC/DC Converters and Off-line UPS
BV DSS
V GS(th)
I GSS
I DSS
R DS(on)
V GS = 0 V, I D = 250 μ A
V DS = V GS , I D = 25 μ A
V GS = ± 20 V, V DS = 0 V
V DS = V DSS
V GS = 0 V T J = 150 ° C
V GS = 10 V, I D = 22 A, Notes 1, 2
85
2.5
22
4.5
± 100
1
100
30
V
V
nA
μ A
μ A
m ?
Primary Switch for 24V and 48V
Systems
Distributed Power Architechtures
and VRMs
Electronic Valve Train Systems
High Current Switching
Applications
High Voltage Synchronous Recifier
DS99646 (11/06)
? 2006 IXYS CORPORATION All rights reserved
相关PDF资料
IXTP4N80P MOSFET N-CH 800V 3.5A TO-220
IXTP50N085T MOSFET N-CH 85V 50A TO-220
IXTP50N20PM MOSFET N-CH 200V 20A TO-220
IXTP64N055T MOSFET N-CH 55V 64A TO-220
IXTP70N085T MOSFET N-CH 85V 70A TO-220
IXTP7N60PM MOSFET N-CH 600V 4A TO-220
IXTP7N60P MOSFET N-CH 600V 7A TO-220
IXTP8N50PM MOSFET N-CH 500V 4A TO-220
相关代理商/技术参数
IXTP44N15T 功能描述:MOSFET 44 Amps 150V 45 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTP44N25T 功能描述:MOSFET 44 Amps 250V 72 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTP44N30T 功能描述:MOSFET 44 Amps 300V 85 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTP44P15T 功能描述:MOSFET -44 Amps -150V 0.065 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTP450P2 功能描述:MOSFET PolarP2 Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTP460P2 功能描述:MOSFET PolarP2 Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTP48N20T 功能描述:MOSFET 48 Amps 200V 50 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTP48P05T 功能描述:MOSFET TenchP Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube